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CDCEL949PERF-EVM数据手册
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6
CDCE949
,
CDCEL949
SCAS844F AUGUST 2007REVISED OCTOBER 2016
www.ti.com
Product Folder Links: CDCE949 CDCEL949
Submit Documentation Feedback Copyright © 2007–2016, Texas Instruments Incorporated
(1) For more information about VCXO configuration and crystal recommendation, see VCXO Application Guideline for CDCE(L)9xx Family
(SCAA085).
(2) Pulling range depends on crystal type, on-chip crystal load capacitance and PCB stray capacitance; pulling range of min ±120 ppm
applies for crystal listed in VCXO Application Guideline for CDCE(L)9xx Family (SCAA085).
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
V
DD
Device supply voltage 1.7 1.8 1.9 V
V
DD(OUT)
Output Yx supply voltage
CDCE949 2.3 3.6
V
CDCEL949 1.7 1.9
V
IL
Low level input voltage LVCMOS 0.3 × V
DD
V
V
IH
High level input voltage LVCMOS 0.7 × V
DD
V
V
I(thresh)
Input voltage threshold LVCMOS 0.5 × V
DD
V
V
IS
Input voltage
S0 0 1.9
V
S1, S2, SDA, SCL,
V
Ithresh
= 0.5 × V
DD
0 3.6
V
ICLK
Input voltage CLK 0 1.9 V
I
OH
/I
OL
Output current
V
DDout
= 3.3 V ±12 mA
V
DDout
= 2.5 V ±10 mA
V
DDout
= 1.8 V ±8 mA
C
L
Output load LVCMOS 10 pF
T
A
Operating free-air temperature –40 85 °C
CRYSTAL AND VCXO
(1)
f
Xtal
Crystal Input frequency (fundamental mode) 8 27 32 MHz
ESR Effective series resistance 100 Ω
f
PR
Pulling (0 V V
Ctrl
1.8 V)
(2)
±120 ±150 ppm
V
(Ctrl)
Frequency control voltage 0 V
DD
V
C
0
/C
1
Pullability ratio 220
C
L
On-chip load capacitance at Xin and Xout 0 20 pF
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2) The package thermal impedance is calculated in accordance with JESD 51 and JEDEC2S2P (high-k board).
7.4 Thermal Information
THERMAL METRIC
(1)
CDCEx949
UNITPW (TSSOP)
24 PINS
θ
JA
Junction-to-ambient thermal resistance
(2)
Airflow 0 (LFM) 91
°C/W
Airflow 150 (LFM) 75
Airflow 200 (LFM) 74
Airflow 250 (LFM) 73
Airflow 500 (LFM) 65
θ
JCtop
Junction-to-case (top) thermal resistance 0.5 °C/W
θ
JB
Junction-to-board thermal resistance 52 °C/W
ψ
JT
Junction-to-top characterization parameter 0.5 °C/W
ψ
JB
Junction-to-board characterization parameter 50.1 °C/W
θ
JCbot
Junction-to-case (bottom) thermal resistance 50 °C/W

CDCEL949PERF-EVM 数据手册

TI(德州仪器)
26 页 / 1.31 MByte
TI(德州仪器)
41 页 / 1.5 MByte
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6 页 / 0.27 MByte

CDCEL949 数据手册

TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
TEXAS INSTRUMENTS  CDCEL949PERF-EVM  评估模块, 时钟发生器, CDCEL949
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
TI(德州仪器)
可编程4 -PLL VCXO时钟合成器与1.8V , 2.5V和3.3V LVCMOS输出 Programmable 4-PLL VCXO Clock Synthesizer with 1.8V, 2.5V and 3.3V LVCMOS Outputs
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