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MC33161DR2 用户编程技术手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
电源监控芯片
封装:
SOIC-8
描述:
通用电压监测器 Universal Voltage Monitors
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MC33161DR2数据手册
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AND8426/D
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2
to noise or comparator input voltage fluctuation. For example, at the automotive application, the noise level or voltage
fluctuation (divided down to comparator input) may be as high as 300 mV − 400 mV during system operating. Therefore, a
comprehensive and easy way to increase the hysteresis is definitely a need for the MC34161/MC33161 application under high
noise level.
This document demonstrates the steps to show how to program the hysteresis voltage. And also, simulation results together
with laboratory bench test verification will be shown.
Vref
IN1
IN2
GND
VCC
Mode Sel
OUT1
OUT2
Vin
R6
R5
R3
+5V
MC33161
R1
R2
R4
Out
Figure 2. Schematic for Programming the Hysteresis Voltage
The configuration in the Figure 2 shows the circuit schematic for programming the hysteresis voltage. Basically, the
hysteresis can be adjusted by varying R2, R3 and R4. Moreover, R1 and R2 are also used for the purpose of dividing down
the external V
IN
voltage. As mentioned before, R2, R3 and R4 can affect the amount of hysteresis voltage, it is necessary to
find the easy way for the user to set the hysteresis voltage to fit for his own application. For R5 and R6, for typical application
it sets as R5 = 200k and R6 = 10k.
From the circuit simulation result, it is found that R3 variation (fix R1, R2 and R4) can provide very good linear relationship
with hysteresis voltage and Figure 3 depicts it:
Hysteresis Voltage versus R3 (R1=10K, R2=3K)
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0246810121416
R3 (Kohms)
Hysteresis (V)
R4=100K R4=300K R4=500K
Figure 3. Chart to Show the Linear Relationship Between R3 and Hysteresis Voltage
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