Datasheet 搜索 > 电源监控芯片 > ON Semiconductor（安森美） > MC33161DR2 数据手册 > MC33161DR2 用户编程技术手册 3/9 页
器件3D模型￥ 6.328
MC33161DR2 用户编程技术手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
电源监控芯片
封装:
SOIC-8
描述:
通用电压监测器 Universal Voltage Monitors
Pictures:
3D模型
符号图
焊盘图
引脚图
产品图
页面导航:
原理图在P1P2P5
型号编码规则在P9
导航目录
MC33161DR2数据手册
Page:
of 9 Go
若手册格式错乱，请下载阅览PDF原文件
AND8426/D
http://onsemi.com
3
For given V
IN+
and DV
IN
(i,e. Hysteresis Voltage) with fixed R2 and R4, we are required to evaluate R1 and R3 to complete
the system configuration. The charts shown at next page will help us how to evaluate R1 and R3. All the equations attached
at charts are formed by the method of linear regression using known values which are acquired from simulation results.
DVIN/VIN+ Ratio versus R3 (R1=10K, R2=3K, R4=100K)
0
0.05
0.1
0.15
0.2
0.25
0 2 4 6 8 10 12 14 16
R3 (Kohms)
DVIN/VIN+ Ratio
Figure 4. Chart for DV
IN
/V
IN+
Ratio versus R3
(DVIN/VIN+) = 0.0125* R3 + 0.0483
Figure 5. Chart for V
IN+
versus R3
VIN+ versus R3 (R1=10K, R2=3K, R4=100K)
5.6
5.7
5.8
5.9
6
6.1
6.2
6.3
6.4
6.5
6.6
0 24 681 01 21 4
R3 (Kohms)
VIN+ (V)
16
VIN+ = 0.0578* R3 + 5.6569
器件 Datasheet 文档搜索
AiEMA 数据库涵盖高达 72,405,303 个元件的数据手册，每天更新 5,000 多个 PDF 文件
