Datasheet 搜索 > 电源监控芯片 > ON Semiconductor（安森美） > MC33161DR2 数据手册 > MC33161DR2 用户编程技术手册 5/9 页
器件3D模型￥ 6.328
MC33161DR2 用户编程技术手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
电源监控芯片
封装:
SOIC-8
描述:
通用电压监测器 Universal Voltage Monitors
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MC33161DR2数据手册
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5
Validation by PSPICE Simulation
Now, we put those resistor values into PSPICE for functional validation.
Figure 7. MC33161 PSPICE Schematic Model
Note: For the comparators portion, LM324 (U1A/U1B), R18(R19) and R53(R54) are used to provide 25 mV hysteresis
which is the “intrinsic” amount per datasheet quoted. And input characteristics of LM324 is quite similar to those of real
MC33161.
Figure 8. Simulation Result (V
IN+
= 2.9907 V, V
IN−
= 2.7450 V, DV
IN
= 2.9907 − 2.7450 = 0.2457 V)
8.0V
Time
0s 10ms 20ms 30ms 40ms 50ms 60ms 70ms 80ms 90ms 100m
s
6.0V
4.0V
2.0V
0V
V(OUT)
V(VIN)
So, the simulation result is consistent with theoretical calculation.
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