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MJD44H11G 其他数据使用手册 - ON Semiconductor（安森美）
制造商:
ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-252-3
描述:
ON SEMICONDUCTOR MJD44H11G 单晶体管 双极, 音频, NPN, 80 V, 85 MHz, 20 W, 8 A, 60 hFE
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MJD44H11G数据手册
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若手册格式错乱，请下载阅览PDF原文件
MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
http://onsemi.com
2
MAXIMUM RATINGS (T
A
= 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)
Rating
Symbol Max Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Emitter−Base Voltage V
EB
5 Vdc
Collector Current − Continuous
− Peak
I
C
8
16
Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
20
0.16
W
W/°C
Total Power Dissipation (Note 1)
@ T
A
= 25°C
Derate above 25°C
P
D
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
6.25 °C/W
Thermal Resistance, Junction−to−Ambient (Note 1)
R
q
JA
71.4 °C/W
Lead Temperature for Soldering T
L
260 °C
1. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
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