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MJD44H11G
3.222
导航目录
  • 封装尺寸在P8P9
  • 焊盘布局在P8
  • 型号编码规则在P1P7P9
  • 标记信息在P1P9
  • 封装信息在P7
  • 技术参数、封装参数在P7
  • 应用领域在P1
  • 电气规格在P3
MJD44H11G数据手册
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MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
http://onsemi.com
4
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t), EFFECTIVE TRANSIENT THERMAL
R
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 6.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
RESISTANCE (NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I
C
, COLLECTOR CURRENT (AMP)
20
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
3 100
2
0.5
5
0.1
THERMAL LIMIT @ T
C
= 25°C
WIRE BOND LIMIT
5 7 20 7010
100ms
dc
0.05
0.3
1
3
10
5030
Figure 2. Maximum Forward Bias
Safe Operating Area
1ms
500ms
5ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (°C)
0
50 75 100 125 150
20
15
10
5
P
D
, POWER DISSIPATION (WATTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 3. Power Derating
T
C
T
A
SURFACE
MOUNT

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