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MJD44H11G 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-252-3
描述:
ON SEMICONDUCTOR MJD44H11G 单晶体管 双极, 音频, NPN, 80 V, 85 MHz, 20 W, 8 A, 60 hFE
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MJD44H11G数据手册
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MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
http://onsemi.com
5
Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain
I
C
, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain
Figure 8. MJD44H11 Saturation Voltage
V
CE(sat)
Figure 9. MJD45H11 Saturation Voltage
V
CE(sat)
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
h
FE
, DC CURRENT GAINV
CE(sat)
, COLL−EMIT SATURATION VOLTAGE (V)
150°C
−55°C
25°C
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
150°C
−55°C
25°C
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
150°C
−55°C
25°C
V
CE
= 4 V
I
C
, COLLECTOR CURRENT (A)
1010.10.01
10
100
1000
h
FE
, DC CURRENT GAIN
150°C
−55°C
25°C
V
CE
= 4 V
0.5
150°C
−55°C
25°C
IC/IB = 20
I
C
, COLLECTOR CURRENT (A)
1010.10.01
0
0.1
0.2
0.3
0.4
0.6
0.7
0.8
V
CE(sat)
, COLL−EMIT SATURATION VOLTAGE (V)
0.5
150°C
−55°C
25°C
IC/IB = 20
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