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MJD44H11G 其他数据使用手册 - ON Semiconductor（安森美）
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ON Semiconductor（安森美）
分类:
双极性晶体管
封装:
TO-252-3
描述:
ON SEMICONDUCTOR MJD44H11G 单晶体管 双极, 音频, NPN, 80 V, 85 MHz, 20 W, 8 A, 60 hFE
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MJD44H11G数据手册
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MJD44H11, NJVMJD44H11 (NPN), MJD45H11, NJVMJD45H11 (PNP)
http://onsemi.com
6
Figure 10. MJD44H11 Saturation Voltage
V
BE(sat)
Figure 11. MJD45H11 Saturation Voltage
V
BE(sat)
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Figure 12. MJD44H11 Collector Saturation
Region
Figure 13. MJD45H11 Collector Saturation
Region
I
B
, BASE CURRENT (mA) I
B
, BASE CURRENT (mA)
10,00010001001010.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance
V
R
, REVERSE VOLTAGE (V)
1001010.1
10
100
1000
V
BE(sat)
, BASE−EMIT SATURATION
VOLTAGE (V)
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)C, CAPACITANCE (pF)
150°C
−55°C
25°C
IC/IB = 20
1010.10.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
BE(sat)
, BASE−EMIT SATURATION
VOLTAGE (V)
150°C
−55°C
25°C
IC/IB = 20
0.8
1.2
1.6
T
A
= 25°C
I
C
= 8 A
1 A
I
C
= 3 A
0.5 AI
C
= 0.1 A
10,00010001001010.1
0
0.4
0.2
0.6
1.0
1.4
1.8
2.0
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
0.8
1.2
1.6
T
A
= 25°C
Cob
V
R
, REVERSE VOLTAGE (V)
1001010.1
10
100
1000
C, CAPACITANCE (pF)
Cob
I
C
= 8 A
1 A
I
C
= 3 A
0.5 A
I
C
= 0.1 A
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