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TIP32C 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
双极性晶体管
封装:
TO-220-3
描述:
STMICROELECTRONICS TIP32C 单晶体管 双极, PNP, -100 V, 40 W, -3 A, 50 hFE
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TIP32C数据手册
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若手册格式错乱，请下载阅览PDF原文件
ES3A, ES3B, ES3C, ES3D
www.vishay.com
Vishay General Semiconductor
Revision: 19-Feb-15
2
Document Number: 88589
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Note
(1)
Units mounted on PCB with 0.31" x 0.31" (8.0 mm x 8.0 mm) copper pad areas
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL ES3A ES3B ES3C ES3D UNIT
Maximum instantaneous
forward voltage
3.0 A V
F
(1)
0.90 V
Maximum DC reverse current at
rated DC blocking voltage
T
A
= 25 °C
I
R
10
µA
T
A
= 100 °C 500
Maximum reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
20 ns
Maximum reverse recovery time
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
t
rr
30
ns
T
J
= 100 °C 50
Maximum stored charge
I
F
= 3.0 A, V
R
= 30 V,
dI/dt = 50 A/μs, I
rr
= 10 % I
RM
T
J
= 25 °C
Q
rr
15
nC
T
J
= 100 °C 35
Typical junction capacitance 4.0 V, 1 MHz C
J
45 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL ES3A ES3B ES3C ES3D UNIT
Typical thermal resistance
R
JA
(1)
47
°C/W
R
JL
(1)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES3D-E3/57T 0.211 57T 850 7" diameter plastic tape and reel
ES3D-E3/9AT 0.211 9AT 3500 13" diameter plastic tape and reel
ES3DHE3_A/H
(1)
0.211 H 850 7" diameter plastic tape and reel
ES3DHE3_A/I
(1)
0.211 I 3500 13" diameter plastic tape and reel
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