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TIP32C 其他数据使用手册 - ST Microelectronics（意法半导体）
制造商:
ST Microelectronics（意法半导体）
分类:
双极性晶体管
封装:
TO-220-3
描述:
STMICROELECTRONICS TIP32C 单晶体管 双极, PNP, -100 V, 40 W, -3 A, 50 hFE
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TIP32C数据手册
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ES3A, ES3B, ES3C, ES3D
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Revision: 19-Feb-15
3
Document Number: 88589
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RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
0
3.0
80 90 100 110 120 130 140 150
Average Forward Rectified Current (A)
Lead Temperature (°C)
2.0
1.0
Resistive or Inductive Load
P.C.B. Mounted on
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
0
25
50
75
100
125
150
1 10010
Peak Forward Surge Current (A)
Number of Cycles at 60 Hz
8.3 ms Single Half Sine-Wave
at T
L
= 100 °C
0.01
0.1
1
10
100
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 125 °C
0.1 0.3 0.5 0.7 0.9 1.1 1.3
Instantaneous Forward Voltage (V)
0.1
1
10
100
1000
10 000
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
0 20406080 100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
20
10
30
40
50
0
1
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
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